KSD1616ALTA
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- Mfr.Part #
- KSD1616ALTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 2,000
- In Stock ：
- 2,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2004
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Max Power Dissipation :
- 750mW
- Mount :
- Through Hole
- Max Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 300mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Number of Terminations :
- 3
- Power Dissipation :
- 750mW
- Collector Emitter Voltage (VCEO) :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 6 Weeks
- Current Rating :
- 1A
- Width :
- 4.19mm
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 135
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Box (TB)
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Length :
- 5.2mm
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Height :
- 5.33mm
- Weight :
- 240mg
- Base Part Number :
- KSD1616
- Transition Frequency :
- 160MHz
- Frequency :
- 160MHz
- Number of Elements :
- 1
- Voltage - Rated DC :
- 60V
- Collector Base Voltage (VCBO) :
- 120V
- Gain Bandwidth Product :
- 160MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Max Collector Current :
- 1A
- Datasheets
- KSD1616ALTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD1616ALTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 50mA, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.
KSD1616ALTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616ALTA Applications
There are a lot of ON Semiconductor
KSD1616ALTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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