KSD1616ALTA
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- Mfr.Part #
- KSD1616ALTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 2,000
- In Stock ：
- 2,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 300mV
- Published :
- 2004
- Factory Lead Time :
- 6 Weeks
- Lead Free :
- Lead Free
- Weight :
- 240mg
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Base Part Number :
- KSD1616
- Transistor Element Material :
- SILICON
- Current Rating :
- 1A
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 120V
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 160MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Width :
- 4.19mm
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 160MHz
- hFE Min :
- 135
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Max Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 750mW
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 5.2mm
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Operating Temperature :
- 150°C TJ
- Height :
- 5.33mm
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Power Dissipation :
- 750mW
- Frequency :
- 160MHz
- Max Collector Current :
- 1A
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Radiation Hardening :
- No
- Datasheets
- KSD1616ALTA
KSD1616ALTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD1616ALTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 50mA, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.
KSD1616ALTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616ALTA Applications
There are a lot of ON Semiconductor
KSD1616ALTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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