KSD1616ALTA
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- Mfr.Part #
- KSD1616ALTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 51
- In Stock ：
- 51
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 100mA 2V
- Max Collector Current :
- 1A
- Max Power Dissipation :
- 750mW
- Current Rating :
- 1A
- Base Part Number :
- KSD1616
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Emitter Voltage (VCEO) :
- 60V
- Transition Frequency :
- 160MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Frequency :
- 160MHz
- hFE Min :
- 135
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 750mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 120V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Gain Bandwidth Product :
- 160MHz
- Height :
- 5.33mm
- Published :
- 2004
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Width :
- 4.19mm
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Length :
- 5.2mm
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 60V
- Datasheets
- KSD1616ALTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD1616ALTA Overview
DC current gain in this device equals 300 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 50mA, 1A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 160MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.
KSD1616ALTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616ALTA Applications
There are a lot of ON Semiconductor
KSD1616ALTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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