KSD1616AGTA
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- Mfr.Part #
- KSD1616AGTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A TO92-3
- Stock
- 28,041
- In Stock ：
- 28,041
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Base Voltage (VCBO) :
- 120V
- Max Power Dissipation :
- 750mW
- Transistor Type :
- NPN
- hFE Min :
- 135
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Voltage - Rated DC :
- 60V
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Factory Lead Time :
- 6 Weeks
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e3
- Weight :
- 240mg
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- Published :
- 2007
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 160MHz
- Gain Bandwidth Product :
- 160MHz
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 750mW
- Max Collector Current :
- 1A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Base Part Number :
- KSD1616
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 160MHz
- Element Configuration :
- Single
- Current Rating :
- 1A
- Datasheets
- KSD1616AGTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD1616AGTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 160MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 1A volts at its maximum.
KSD1616AGTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 160MHz
KSD1616AGTA Applications
There are a lot of ON Semiconductor
KSD1616AGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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