KSD1588YTU
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- Mfr.Part #
- KSD1588YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 7A TO220F-3
- Stock
- 563
- In Stock ：
- 563
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- hFE Min :
- 40
- Radiation Hardening :
- No
- Case Connection :
- Isolated
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Tin (Sn)
- Published :
- 2017
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A 1V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 60V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 2W
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Weight :
- 2.27g
- Max Collector Current :
- 7A
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 7A
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Datasheets
- KSD1588YTU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
KSD1588YTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 3A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 7A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 7A volts.
KSD1588YTU Features
the DC current gain for this device is 100 @ 3A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 500mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
KSD1588YTU Applications
There are a lot of ON Semiconductor
KSD1588YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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