KSD1408YTU
- Mfr.Part #
- KSD1408YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 80V 4A TO220F-3
- Stock
- 12,679
- In Stock :
- 12,679
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Power Dissipation :
- 25W
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 8MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Package / Case :
- TO-220-3 Full Pack
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Height :
- 15.87mm
- Published :
- 2000
- Number of Elements :
- 1
- Current Rating :
- 4A
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Gain Bandwidth Product :
- 8MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- Mount :
- Through Hole
- Weight :
- 2.27g
- Frequency :
- 8MHz
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Saturation Voltage :
- 450mV
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Length :
- 10.16mm
- Max Power Dissipation :
- 25W
- hFE Min :
- 40
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 300mA, 3A
- Width :
- 2.54mm
- Voltage - Rated DC :
- 80V
- Case Connection :
- Isolated
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- Datasheets
- KSD1408YTU

NPN 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
KSD1408YTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 450mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 300mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 8MHz.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
KSD1408YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 8MHz
KSD1408YTU Applications
There are a lot of ON Semiconductor
KSD1408YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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