KSD1406GTU
- Mfr.Part #
- KSD1406GTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F-3
- Stock
- 1,707
- In Stock :
- 1,707
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Power - Max :
- 25W
- Frequency - Transition :
- 3MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 300mA, 3A
- Current - Collector (Ic) (Max) :
- 3A
- Package / Case :
- TO-220-3 Full Pack
- Supplier Device Package :
- TO-220F
- Datasheets
- KSD1406GTU

NPN 150°C TJ 100μA ICBO TO-220-3 Full Pack Tube Through Hole
KSD1406GTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 500mA 5V.When VCE saturation is 1V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220F contains the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
KSD1406GTU Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 1V @ 300mA, 3A
the supplier device package of TO-220F
KSD1406GTU Applications
There are a lot of ON Semiconductor
KSD1406GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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