KSD1362RTU
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- Mfr.Part #
- KSD1362RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 70V 5A TO220F-3
- Stock
- 24,614
- In Stock ：
- 24,614
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 5A
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Packaging :
- Tube
- Frequency - Transition :
- 10MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 70V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Power - Max :
- 20W
- Current - Collector Cutoff (Max) :
- 20μA ICBO
- Transistor Type :
- NPN
- Datasheets
- KSD1362RTU
NPN 150°C TJ 20μA ICBO TO-220-3 Full Pack Tube Through Hole
KSD1362RTU Overview
In this device, the DC current gain is 40 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500mA, 5A.The device exhibits a collector-emitter breakdown at 70V.
KSD1362RTU Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 1V @ 500mA, 5A
KSD1362RTU Applications
There are a lot of ON Semiconductor
KSD1362RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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