KSC945YTA
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- Mfr.Part #
- KSC945YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 17,776
- In Stock ：
- 17,776
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 150mA
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Width :
- 3.86mm
- hFE Min :
- 40
- Collector Emitter Breakdown Voltage :
- 50V
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Published :
- 2002
- Base Part Number :
- KSC945
- Current Rating :
- 150mA
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Voltage - Rated DC :
- 50V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Height :
- 4.58mm
- Number of Terminations :
- 3
- Weight :
- 240mg
- Transistor Application :
- AMPLIFIER
- Frequency :
- 300MHz
- Factory Lead Time :
- 12 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 150mV
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 250mW
- Length :
- 4.58mm
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Mounting Type :
- Through Hole
- Datasheets
- KSC945YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC945YTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
KSC945YTA Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945YTA Applications
There are a lot of ON Semiconductor
KSC945YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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