KSC945CGBU
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- Mfr.Part #
- KSC945CGBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 56,869
- In Stock ：
- 56,869
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 150mV
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Width :
- 3.86mm
- Height :
- 4.58mm
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 40
- Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 250mW
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 50V
- Voltage - Rated DC :
- 50V
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Max Collector Current :
- 150mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Packaging :
- Bulk
- Weight :
- 179mg
- Base Part Number :
- KSC945
- Length :
- 4.58mm
- Gain Bandwidth Product :
- 300MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Published :
- 2002
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mount :
- Through Hole
- Current Rating :
- 150mA
- Mounting Type :
- Through Hole
- Frequency :
- 300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Datasheets
- KSC945CGBU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945CGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor
KSC945CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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