KSC945CGBU
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- Mfr.Part #
- KSC945CGBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 56,869
- In Stock ：
- 56,869
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 300MHz
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Length :
- 4.58mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Power Dissipation :
- 250mW
- Width :
- 3.86mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Pins :
- 3
- Height :
- 4.58mm
- Weight :
- 179mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Max Collector Current :
- 150mA
- Base Part Number :
- KSC945
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 150mA
- Collector Emitter Saturation Voltage :
- 150mV
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Mount :
- Through Hole
- hFE Min :
- 40
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 250mW
- Published :
- 2002
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 300MHz
- Element Configuration :
- Single
- Voltage - Rated DC :
- 50V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Datasheets
- KSC945CGBU
KSC945CGBU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945CGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor
KSC945CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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