KSC945CGBU
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- Mfr.Part #
- KSC945CGBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 56,869
- In Stock ：
- 56,869
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- Frequency :
- 300MHz
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 40
- Max Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Number of Elements :
- 1
- Weight :
- 179mg
- Height :
- 4.58mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- KSC945
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 250mW
- Factory Lead Time :
- 2 Weeks
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Length :
- 4.58mm
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 150mV
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 50V
- Width :
- 3.86mm
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 50V
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Published :
- 2002
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 300MHz
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Max Collector Current :
- 150mA
- Voltage - Rated DC :
- 50V
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Current Rating :
- 150mA
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transition Frequency :
- 300MHz
- Radiation Hardening :
- No
- Datasheets
- KSC945CGBU
KSC945CGBU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945CGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor
KSC945CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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