KSC900GTA
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- Mfr.Part #
- KSC900GTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A TO92-3
- Stock
- 12,000
- In Stock ：
- 12,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Power - Max :
- 250mW
- JESD-30 Code :
- O-PBCY-T3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Frequency - Transition :
- 100MHz
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500μA 3V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Transition Frequency :
- 100MHz
- Packaging :
- Tape and Box (TB)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Reach Compliance Code :
- Unknown
- Terminal Position :
- BOTTOM
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 2mA, 20mA
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Additional Feature :
- LOW NOISE
- Surface Mount :
- No
- Current - Collector (Ic) (Max) :
- 50mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Qualification Status :
- COMMERCIAL
- Datasheets
- KSC900GTA
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC900GTA Overview
In this device, the DC current gain is 200 @ 500μA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 2mA, 20mA.100MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 25V.
KSC900GTA Features
the DC current gain for this device is 200 @ 500μA 3V
the vce saturation(Max) is 200mV @ 2mA, 20mA
a transition frequency of 100MHz
KSC900GTA Applications
There are a lot of Rochester Electronics, LLC
KSC900GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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