KSC945CGBU
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- Mfr.Part #
- KSC945CGBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 56,869
- In Stock ：
- 56,869
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 50V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 300MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 250mW
- Element Configuration :
- Single
- Base Part Number :
- KSC945
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 150mA
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2002
- Transition Frequency :
- 300MHz
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Current Rating :
- 150mA
- Width :
- 3.86mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 179mg
- Height :
- 4.58mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 150mV
- Packaging :
- Bulk
- Length :
- 4.58mm
- Factory Lead Time :
- 2 Weeks
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Datasheets
- KSC945CGBU
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945CGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor
KSC945CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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