KSC945CGBU
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- Mfr.Part #
- KSC945CGBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 56,869
- In Stock ：
- 56,869
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 50V
- Collector Emitter Saturation Voltage :
- 150mV
- Gain Bandwidth Product :
- 300MHz
- Current Rating :
- 150mA
- Frequency :
- 300MHz
- Max Power Dissipation :
- 250mW
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- hFE Min :
- 40
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Length :
- 4.58mm
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 250mW
- Published :
- 2002
- Width :
- 3.86mm
- Terminal Position :
- BOTTOM
- Base Part Number :
- KSC945
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Max Collector Current :
- 150mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Height :
- 4.58mm
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- Weight :
- 179mg
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Datasheets
- KSC945CGBU
KSC945CGBU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945CGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor
KSC945CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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