KSC945CGBU
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- Mfr.Part #
- KSC945CGBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 56,869
- In Stock ：
- 56,869
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 50V
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 250mW
- Published :
- 2002
- Gain Bandwidth Product :
- 300MHz
- Length :
- 4.58mm
- Frequency :
- 300MHz
- Current Rating :
- 150mA
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Base Part Number :
- KSC945
- hFE Min :
- 40
- Number of Pins :
- 3
- Max Collector Current :
- 150mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Width :
- 3.86mm
- Mount :
- Through Hole
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Transition Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Power Dissipation :
- 250mW
- Collector Emitter Voltage (VCEO) :
- 50V
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 179mg
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Height :
- 4.58mm
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- 150mV
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Datasheets
- KSC945CGBU
KSC945CGBU Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945CGBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1mA 6V.With a collector emitter saturation voltage of 150mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 300MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.
KSC945CGBU Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGBU Applications
There are a lot of ON Semiconductor
KSC945CGBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
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