KSC900CGTA
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- Mfr.Part #
- KSC900CGTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.05A TO92-3
- Stock
- 28,602
- In Stock ：
- 28,602
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 50mA
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 2mA, 20mA
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500μA 3V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Base Part Number :
- KSC900
- Supplier Device Package :
- TO-92-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Power - Max :
- 250mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Frequency - Transition :
- 100MHz
- Datasheets
- KSC900CGTA
NPN 150°C TJ 50nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC900CGTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500μA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 2mA, 20mA.TO-92-3 is the supplier device package for this product.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
KSC900CGTA Features
the DC current gain for this device is 200 @ 500μA 3V
the vce saturation(Max) is 200mV @ 2mA, 20mA
the supplier device package of TO-92-3
KSC900CGTA Applications
There are a lot of ON Semiconductor
KSC900CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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