KSC945YTA
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- Mfr.Part #
- KSC945YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 13,197
- In Stock ：
- 13,197
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 50V
- Max Collector Current :
- 150mA
- Mount :
- Through Hole
- Transition Frequency :
- 300MHz
- Base Part Number :
- KSC945
- Collector Emitter Saturation Voltage :
- 150mV
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Box (TB)
- Length :
- 4.58mm
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Published :
- 2002
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Width :
- 3.86mm
- Max Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Power Dissipation :
- 250mW
- Collector Base Voltage (VCBO) :
- 60V
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Height :
- 4.58mm
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- 150mA
- Weight :
- 240mg
- Gain Bandwidth Product :
- 300MHz
- Polarity/Channel Type :
- NPN
- hFE Min :
- 40
- Collector Emitter Voltage (VCEO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 250mW
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Frequency :
- 300MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- KSC945YTA
KSC945YTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC945YTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 150mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
KSC945YTA Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945YTA Applications
There are a lot of ON Semiconductor
KSC945YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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