KSC945YBU
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- Mfr.Part #
- KSC945YBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 9,144
- In Stock ：
- 9,144
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Height :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2002
- Terminal Position :
- BOTTOM
- hFE Min :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 150mV
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Weight :
- 179mg
- Lead Free :
- Lead Free
- Current Rating :
- 150mA
- Voltage - Rated DC :
- 50V
- Mounting Type :
- Through Hole
- Base Part Number :
- KSC945
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Length :
- 4.58mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 300MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Width :
- 3.86mm
- Pbfree Code :
- yes
- Datasheets
- KSC945YBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC945YBU Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A maximum collector current of 150mA volts is possible.
KSC945YBU Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945YBU Applications
There are a lot of ON Semiconductor
KSC945YBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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