KSC945CYTA
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- Mfr.Part #
- KSC945CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 27,795
- In Stock ：
- 27,795
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 4.58mm
- Power Dissipation :
- 250mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Number of Terminations :
- 3
- Length :
- 4.58mm
- hFE Min :
- 40
- Gain Bandwidth Product :
- 300MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 300MHz
- Width :
- 3.86mm
- Voltage - Rated DC :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency :
- 300MHz
- Current Rating :
- 150mA
- Element Configuration :
- Single
- Base Part Number :
- KSC945
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 12 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 150mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Collector Current :
- 150mA
- Max Power Dissipation :
- 250mW
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Published :
- 2002
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 50V
- Datasheets
- KSC945CYTA
KSC945CYTA Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC945CYTA Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSC945CYTA Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CYTA Applications
There are a lot of ON Semiconductor
KSC945CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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