KSC945CYTA
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- Mfr.Part #
- KSC945CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 27,795
- In Stock ：
- 27,795
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.58mm
- Collector Emitter Voltage (VCEO) :
- 50V
- Max Breakdown Voltage :
- 50V
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Collector Emitter Saturation Voltage :
- 150mV
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 12 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transition Frequency :
- 300MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 150mA
- Current Rating :
- 150mA
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Base Part Number :
- KSC945
- Qualification Status :
- Not Qualified
- Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 300MHz
- Packaging :
- Tape and Box (TB)
- Length :
- 4.58mm
- Operating Temperature :
- 150°C TJ
- Published :
- 2002
- Mount :
- Through Hole
- Voltage - Rated DC :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- REACH SVHC :
- No SVHC
- Width :
- 3.86mm
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 240mg
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- KSC945CYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC945CYTA Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 150mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSC945CYTA Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CYTA Applications
There are a lot of ON Semiconductor
KSC945CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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