KSC945CGTA
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- Mfr.Part #
- KSC945CGTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A TO92-3
- Stock
- 170
- In Stock ：
- 170
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Power Dissipation :
- 250mW
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Max Collector Current :
- 150mA
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Weight :
- 240mg
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 150mV
- Frequency :
- 300MHz
- Current Rating :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 40
- Gain Bandwidth Product :
- 300MHz
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 250mW
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- KSC945
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Length :
- 4.58mm
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Height :
- 4.58mm
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 50V
- Width :
- 3.86mm
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Transition Frequency :
- 300MHz
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 50V
- Published :
- 2002
- Datasheets
- KSC945CGTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC945CGTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1mA 6V.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 150mA.In the part, the transition frequency is 300MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 150mA volts can be achieved.
KSC945CGTA Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 300MHz
KSC945CGTA Applications
There are a lot of ON Semiconductor
KSC945CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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