KSC5305DTU
- Mfr.Part #
- KSC5305DTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 5A TO220-3
- Stock
- 2,726
- In Stock :
- 2,726
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Weight :
- 1.8g
- Power Dissipation :
- 75W
- Width :
- 4.5mm
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Number of Bits :
- 1
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 6 Weeks
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 12V
- Published :
- 2010
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 400V
- Package / Case :
- TO-220-3
- Collector Emitter Saturation Voltage :
- 500mV
- Max Power Dissipation :
- 75W
- Polarity/Channel Type :
- NPN
- hFE Min :
- 8
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Base Voltage (VCBO) :
- 800V
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Height :
- 15.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 400mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 1V
- Packaging :
- Tube
- Length :
- 9.9mm
- Radiation Hardening :
- No
- Max Collector Current :
- 5A
- Datasheets
- KSC5305DTU

NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5305DTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 400mA, 2A.The emitter base voltage can be kept at 12V for high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
KSC5305DTU Features
the DC current gain for this device is 8 @ 2A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 400mA, 2A
the emitter base voltage is kept at 12V
KSC5305DTU Applications
There are a lot of ON Semiconductor
KSC5305DTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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