KSC5305DTU

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Mfr.Part #
KSC5305DTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 400V 5A TO220-3
Stock
2,726
In Stock :
2,726

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e3
Weight :
1.8g
Power Dissipation :
75W
Width :
4.5mm
JEDEC-95 Code :
TO-220AB
ECCN Code :
EAR99
Number of Bits :
1
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Factory Lead Time :
6 Weeks
Mount :
Through Hole
Emitter Base Voltage (VEBO) :
12V
Published :
2010
Element Configuration :
Single
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 3 days ago)
Collector Emitter Breakdown Voltage :
400V
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
400V
Package / Case :
TO-220-3
Collector Emitter Saturation Voltage :
500mV
Max Power Dissipation :
75W
Polarity/Channel Type :
NPN
hFE Min :
8
Mounting Type :
Through Hole
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
10μA ICBO
Collector Base Voltage (VCBO) :
800V
Pbfree Code :
yes
Transistor Type :
NPN
Height :
15.7mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
500mV @ 400mA, 2A
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Number of Pins :
3
Terminal Finish :
Tin (Sn)
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 1V
Packaging :
Tube
Length :
9.9mm
Radiation Hardening :
No
Max Collector Current :
5A
Datasheets
KSC5305DTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5305DTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, KSC5305DTU pinout, KSC5305DTU datasheet PDF, KSC5305DTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5305DTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5305DTU


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5305DTU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 8 @ 2A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 400mA, 2A.The emitter base voltage can be kept at 12V for high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

KSC5305DTU Features


the DC current gain for this device is 8 @ 2A 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 400mA, 2A
the emitter base voltage is kept at 12V


KSC5305DTU Applications


There are a lot of ON Semiconductor
KSC5305DTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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