KSC1815YBU

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Mfr.Part #
KSC1815YBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 50V 0.15A TO92-3
Stock
36,296
In Stock :
36,296

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Base Part Number :
KSC1815
Current Rating :
150mA
Radiation Hardening :
No
Max Power Dissipation :
400mW
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Frequency :
80MHz
Power Dissipation :
400mW
Terminal Finish :
MATTE TIN
Gain Bandwidth Product :
80MHz
hFE Min :
70
Number of Terminations :
3
Collector Emitter Saturation Voltage :
100mV
Transition Frequency :
80MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 2mA 6V
Collector Emitter Breakdown Voltage :
50V
Operating Temperature :
150°C TJ
Transistor Type :
NPN
Collector Emitter Voltage (VCEO) :
50V
Emitter Base Voltage (VEBO) :
5V
Collector Base Voltage (VCBO) :
60V
Mount :
Through Hole
Mounting Type :
Through Hole
Max Collector Current :
150mA
Number of Pins :
3
Element Configuration :
Single
RoHS Status :
RoHS Compliant
Terminal Position :
BOTTOM
Voltage - Rated DC :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Number of Elements :
1
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
100nA ICBO
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Datasheets
KSC1815YBU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC1815YBU from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSC1815, Number of Terminations:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), KSC1815YBU pinout, KSC1815YBU datasheet PDF, KSC1815YBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC1815YBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC1815YBU


NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

KSC1815YBU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 6V.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 150mA.A transition frequency of 80MHz is present in the part.Collector current can be as low as 150mA volts at its maximum.

KSC1815YBU Features


the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 150mA
a transition frequency of 80MHz


KSC1815YBU Applications


There are a lot of ON Semiconductor
KSC1815YBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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