KSC1623GMTF
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- Mfr.Part #
- KSC1623GMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 100MA SOT23-3
- Stock
- 346
- In Stock ：
- 346
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Current Rating :
- 100mA
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Published :
- 2002
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 200mW
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 5V
- Weight :
- 30mg
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Saturation Voltage :
- 150mV
- Length :
- 2.9mm
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 250MHz
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 250MHz
- Mounting Type :
- Surface Mount
- Base Part Number :
- KSC1623
- Max Breakdown Voltage :
- 50V
- Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- hFE Min :
- 90
- Width :
- 1.3mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transition Frequency :
- 250MHz
- Voltage - Rated DC :
- 50V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Height :
- 970μm
- Datasheets
- KSC1623GMTF
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KSC1623GMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
KSC1623GMTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 250MHz
KSC1623GMTF Applications
There are a lot of ON Semiconductor
KSC1623GMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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