KSC1009YTA
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- Mfr.Part #
- KSC1009YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 140V 0.7A TO-92
- Stock
- 32,717
- In Stock ：
- 32,717
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Mount :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- 700mA
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Max Collector Current :
- 700mA
- Max Power Dissipation :
- 800mW
- Number of Pins :
- 3
- Frequency :
- 50MHz
- Transition Frequency :
- 50MHz
- Max Breakdown Voltage :
- 140V
- Emitter Base Voltage (VEBO) :
- 8V
- Length :
- 4.58mm
- Mounting Type :
- Through Hole
- Power Dissipation :
- 800mW
- Height :
- 4.58mm
- Element Configuration :
- Single
- Number of Elements :
- 1
- Width :
- 3.86mm
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 20mA, 200mA
- Weight :
- 240mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Base Part Number :
- KSC1009
- Collector Emitter Saturation Voltage :
- 200mV
- ECCN Code :
- EAR99
- Published :
- 2001
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 160V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 6 Weeks
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- hFE Min :
- 40
- Collector Emitter Voltage (VCEO) :
- 140V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 140V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 140V
- Packaging :
- Tape and Box (TB)
- Datasheets
- KSC1009YTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1009YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 50mA 2V.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 20mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 8V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 700mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 140V volts before it breaks down.A maximum collector current of 700mA volts can be achieved.
KSC1009YTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 700mV @ 20mA, 200mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1009YTA Applications
There are a lot of ON Semiconductor
KSC1009YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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