KSC1008YBU
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- Mfr.Part #
- KSC1008YBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 14,361
- In Stock ：
- 14,361
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Height :
- 4.58mm
- Collector Emitter Saturation Voltage :
- 200mV
- Published :
- 2006
- Factory Lead Time :
- 7 Weeks
- hFE Min :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 800mW
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Length :
- 4.58mm
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Lead Free :
- Lead Free
- Weight :
- 179mg
- Transition Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.86mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 8V
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 50MHz
- Base Part Number :
- KSC1008
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 60V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 700mA
- Transistor Element Material :
- SILICON
- Current Rating :
- 700mA
- Power Dissipation :
- 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Number of Pins :
- 3
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Datasheets
- KSC1008YBU
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSC1008YBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 50mA 2V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 8V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 700mA volts.
KSC1008YBU Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008YBU Applications
There are a lot of ON Semiconductor
KSC1008YBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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