KSB1366GTU
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- Mfr.Part #
- KSB1366GTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 60V 3A TO220F-3
- Stock
- 8,760
- In Stock ：
- 8,760
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 9MHz
- Current Rating :
- -3A
- hFE Min :
- 100
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Package / Case :
- TO-220-3 Full Pack
- Collector Base Voltage (VCBO) :
- -60V
- JESD-609 Code :
- e3
- Transition Frequency :
- 9MHz
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2000
- Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 5V
- Collector Emitter Breakdown Voltage :
- 60V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Weight :
- 2.27g
- Mount :
- Through Hole
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- -7V
- Voltage - Rated DC :
- -60V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Operating Temperature :
- 150°C TJ
- Width :
- 2.54mm
- Base Part Number :
- KSB1366
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- Max Power Dissipation :
- 2W
- Element Configuration :
- Single
- Height :
- 15.87mm
- Gain Bandwidth Product :
- 9MHz
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Max Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- -500mV
- Case Connection :
- Isolated
- Polarity/Channel Type :
- PNP
- Length :
- 10.16mm
- Datasheets
- KSB1366GTU
PNP 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
KSB1366GTU Overview
In this device, the DC current gain is 150 @ 500mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 9MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
KSB1366GTU Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz
KSB1366GTU Applications
There are a lot of ON Semiconductor
KSB1366GTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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