KSB1017YTU

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Mfr.Part #
KSB1017YTU
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP 80V 4A TO220F-3
Stock
10,899
In Stock :
10,899

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Max Collector Current :
4A
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Radiation Hardening :
No
Collector Emitter Saturation Voltage :
-1V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
-4A
Operating Temperature :
150°C TJ
ECCN Code :
EAR99
Frequency :
9MHz
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e3
hFE Min :
40
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
-5V
Power Dissipation :
25W
Gain Bandwidth Product :
9MHz
Number of Terminations :
3
Transition Frequency :
9MHz
Max Power Dissipation :
25W
Polarity/Channel Type :
PNP
Length :
10.16mm
Collector Base Voltage (VCBO) :
-80V
Vce Saturation (Max) @ Ib, Ic :
1.7V @ 300mA, 3A
Width :
2.54mm
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
30μA ICBO
Element Configuration :
Single
Voltage - Rated DC :
-80V
Pbfree Code :
yes
Case Connection :
Isolated
Weight :
2.27g
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 5V
Package / Case :
TO-220-3 Full Pack
RoHS Status :
ROHS3 Compliant
Published :
2000
Terminal Finish :
Tin (Sn)
Collector Emitter Voltage (VCEO) :
80V
Packaging :
Tube
Factory Lead Time :
2 Weeks
Transistor Element Material :
SILICON
Transistor Application :
AMPLIFIER
Transistor Type :
PNP
Height :
15.87mm
Number of Pins :
3
Introducing Transistors - Bipolar (BJT) - Single onsemi KSB1017YTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Number of Pins:3, KSB1017YTU pinout, KSB1017YTU datasheet PDF, KSB1017YTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSB1017YTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSB1017YTU


PNP 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole

KSB1017YTU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 1.7V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 9MHz.A maximum collector current of 4A volts can be achieved.

KSB1017YTU Features


the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 9MHz


KSB1017YTU Applications


There are a lot of ON Semiconductor
KSB1017YTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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