KSB1017YTU
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- Mfr.Part #
- KSB1017YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A TO220F-3
- Stock
- 10,899
- In Stock ：
- 10,899
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.7V @ 300mA, 3A
- Transistor Application :
- AMPLIFIER
- Width :
- 2.54mm
- Collector Emitter Saturation Voltage :
- -1V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Packaging :
- Tube
- Length :
- 10.16mm
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- -80V
- Frequency :
- 9MHz
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 40
- Weight :
- 2.27g
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -4A
- Package / Case :
- TO-220-3 Full Pack
- Voltage - Rated DC :
- -80V
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 9MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Max Power Dissipation :
- 25W
- Max Collector Current :
- 4A
- Terminal Finish :
- Tin (Sn)
- Height :
- 15.87mm
- Transition Frequency :
- 9MHz
- Power Dissipation :
- 25W
- Operating Temperature :
- 150°C TJ
- Published :
- 2000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 5V
- Current - Collector Cutoff (Max) :
- 30μA ICBO
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Datasheets
- KSB1017YTU
PNP 150°C TJ 30μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Tube Through Hole
KSB1017YTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is -1V, which allows for maximum design flexibility.When VCE saturation is 1.7V @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 9MHz.A maximum collector current of 4A volts can be achieved.
KSB1017YTU Features
the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1.7V @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -4A
a transition frequency of 9MHz
KSB1017YTU Applications
There are a lot of ON Semiconductor
KSB1017YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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