KSB1017YTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 300mA, 3A

Emitter Base Voltage (VEBO) :

-5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

15.87mm

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

30μA ICBO

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

80V

Collector Base Voltage (VCBO) :

-80V

Number of Terminations :

3

Transistor Type :

PNP

Weight :

2.27g

Width :

2.54mm

Case Connection :

Isolated

Terminal Finish :

Tin (Sn)

Transition Frequency :

9MHz

Number of Elements :

1

Element Configuration :

Single

Length :

10.16mm

RoHS Status :

ROHS3 Compliant

Current Rating :

-4A

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Saturation Voltage :

-1V

Frequency :

9MHz

Max Power Dissipation :

25W

JESD-609 Code :

e3

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 5V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

hFE Min :

40

Mounting Type :

Through Hole

Published :

2000

Radiation Hardening :

No

Gain Bandwidth Product :

9MHz

Package / Case :

TO-220-3 Full Pack

Polarity/Channel Type :

PNP

Number of Pins :

3

Voltage - Rated DC :

-80V

Max Collector Current :

4A

Power Dissipation :

25W

Lead Free :

Lead Free

Packaging :

Tube

Transistor Application :

AMPLIFIER

Mount :

Through Hole

Pbfree Code :

yes