KSB1097YTU
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- Mfr.Part #
- KSB1097YTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 60V 7A TO220F-3
- Stock
- 16,607
- In Stock ：
- 16,607
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Package / Case :
- TO-220-3 Full Pack
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A 1V
- Current - Collector (Ic) (Max) :
- 7A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 500mA, 5A
- Supplier Device Package :
- TO-220F
- Power - Max :
- 2W
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Datasheets
- KSB1097YTU
PNP 150°C TJ 10μA ICBO TO-220-3 Full Pack Tube Through Hole
KSB1097YTU Overview
This device has a DC current gain of 100 @ 3A 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-220F.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
KSB1097YTU Features
the DC current gain for this device is 100 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220F
KSB1097YTU Applications
There are a lot of Rochester Electronics, LLC
KSB1097YTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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