KSB1015YTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Number of Elements :

1

Gain Bandwidth Product :

9MHz

Current Rating :

-3A

Case Connection :

Isolated

Polarity/Channel Type :

PNP

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

1V @ 300mA, 3A

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

100μA ICBO

Published :

2000

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Base Part Number :

KSB1015

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

hFE Min :

60

Max Collector Current :

3A

Length :

10.16mm

Emitter Base Voltage (VEBO) :

-7V

Mount :

Through Hole

Operating Temperature :

150°C TJ

Weight :

2.27g

Width :

2.54mm

Voltage - Rated DC :

-60V

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 5V

Collector Base Voltage (VCBO) :

-60V

Collector Emitter Saturation Voltage :

-500mV

Collector Emitter Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Factory Lead Time :

2 Weeks

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Max Power Dissipation :

25W

Frequency :

9MHz

Height :

15.87mm

Collector Emitter Voltage (VCEO) :

60V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Element Configuration :

Single

Transition Frequency :

9MHz

Power Dissipation :

25W