KSB1015YTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA 5V

Power Dissipation :

25W

Number of Terminations :

3

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

-60V

Frequency :

9MHz

Transition Frequency :

9MHz

JESD-609 Code :

e3

Height :

15.87mm

Transistor Application :

AMPLIFIER

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Power Dissipation :

25W

Lead Free :

Lead Free

Max Collector Current :

3A

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

100μA ICBO

Collector Emitter Saturation Voltage :

-500mV

Collector Emitter Voltage (VCEO) :

60V

Element Configuration :

Single

ECCN Code :

EAR99

Packaging :

Tube

Radiation Hardening :

No

Factory Lead Time :

2 Weeks

Package / Case :

TO-220-3 Full Pack

Current Rating :

-3A

Case Connection :

Isolated

Collector Emitter Breakdown Voltage :

60V

Width :

2.54mm

Published :

2000

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Emitter Base Voltage (VEBO) :

-7V

Voltage - Rated DC :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Mount :

Through Hole

Transistor Type :

PNP

Gain Bandwidth Product :

9MHz

Base Part Number :

KSB1015

Length :

10.16mm

Number of Pins :

3

Polarity/Channel Type :

PNP

Weight :

2.27g

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

1V @ 300mA, 3A

hFE Min :

60