KSB1151YS
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- Mfr.Part #
- KSB1151YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A TO126-3
- Stock
- 8,114
- In Stock ：
- 8,114
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2003
- Max Power Dissipation :
- 1.3W
- Collector Emitter Saturation Voltage :
- -140mV
- Lead Free :
- Lead Free
- Weight :
- 761mg
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Max Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Max Collector Current :
- 5A
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 3MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -60V
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Emitter Base Voltage (VEBO) :
- -7V
- Packaging :
- Bulk
- Base Part Number :
- KSB1151
- Power Dissipation :
- 1.3W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage - Rated DC :
- -60V
- JESD-609 Code :
- e3
- Datasheets
- KSB1151YS
KSB1151YS Documents
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSB1151YS Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
KSB1151YS Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 3MHz
KSB1151YS Applications
There are a lot of ON Semiconductor
KSB1151YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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