KSB1151YS
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- Mfr.Part #
- KSB1151YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A TO126-3
- Stock
- 8,114
- In Stock ：
- 8,114
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 60V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- -7V
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 100
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- -60V
- Packaging :
- Bulk
- Max Collector Current :
- 5A
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Base Part Number :
- KSB1151
- Published :
- 2003
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Current Rating :
- -5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Max Power Dissipation :
- 1.3W
- Collector Emitter Saturation Voltage :
- -140mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Through Hole
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Transition Frequency :
- 3MHz
- Voltage - Rated DC :
- -60V
- Power Dissipation :
- 1.3W
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Weight :
- 761mg
- Datasheets
- KSB1151YS
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSB1151YS Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
KSB1151YS Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 3MHz
KSB1151YS Applications
There are a lot of ON Semiconductor
KSB1151YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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