KSB1149OS
- Mfr.Part #
- KSB1149OS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 3A TO126-3
- Stock
- 27,931
- In Stock :
- 27,931
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 1.5mA, 1.5A
- Power - Max :
- 1.3W
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP - Darlington
- Current - Collector (Ic) (Max) :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1.5A 2V
- Base Part Number :
- KSB1149
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Datasheets
- KSB1149OS

PNP - Darlington 150°C TJ 10μA ICBO TO-225AA, TO-126-3 Bulk Through Hole
KSB1149OS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 1.5A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 1.5mA, 1.5A.Device displays Collector Emitter Breakdown (100V maximal voltage).
KSB1149OS Features
the DC current gain for this device is 2000 @ 1.5A 2V
the vce saturation(Max) is 1.2V @ 1.5mA, 1.5A
KSB1149OS Applications
There are a lot of ON Semiconductor
KSB1149OS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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