KSB1116YTA
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- Mfr.Part #
- KSB1116YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A TO92-3
- Stock
- 7,129
- In Stock ：
- 7,129
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Pbfree Code :
- yes
- Current - Collector (Ic) (Max) :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Transistor Type :
- PNP
- Terminal Finish :
- MATTE TIN
- Transition Frequency :
- 120MHz
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Surface Mount :
- No
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 750mW
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 135 @ 100mA 2V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-30 Code :
- O-PBCY-T3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Frequency - Transition :
- 120MHz
- Qualification Status :
- COMMERCIAL
- Datasheets
- KSB1116YTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSB1116YTA Overview
In this device, the DC current gain is 135 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 1A.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
KSB1116YTA Features
the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 120MHz
KSB1116YTA Applications
There are a lot of Rochester Electronics, LLC
KSB1116YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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