KSB1116SYTA
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- Mfr.Part #
- KSB1116SYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A TO92-3
- Stock
- 11,617
- In Stock ：
- 11,617
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 135 @ 100mA 2V
- Transition Frequency :
- 120MHz
- Current - Collector (Ic) (Max) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- O-PBCY-T3
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Power - Max :
- 750mW
- Polarity/Channel Type :
- PNP
- Frequency - Transition :
- 120MHz
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Unknown
- Terminal Finish :
- MATTE TIN
- Qualification Status :
- COMMERCIAL
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Surface Mount :
- No
- Datasheets
- KSB1116SYTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSB1116SYTA Overview
This device has a DC current gain of 135 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 50mA, 1A means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 120MHz.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
KSB1116SYTA Features
the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 120MHz
KSB1116SYTA Applications
There are a lot of Rochester Electronics, LLC
KSB1116SYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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