KSB1116GBU

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Mfr.Part #
KSB1116GBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 50V 1A TO92-3
Stock
37,951
In Stock :
37,951

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Base Part Number :
KSB1116
Transistor Type :
PNP
Element Configuration :
Single
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
50V
Mount :
Through Hole
Collector Base Voltage (VCBO) :
60V
Current Rating :
-1A
Gain Bandwidth Product :
120MHz
Number of Elements :
1
Emitter Base Voltage (VEBO) :
-6V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 50mA, 1A
Max Collector Current :
1A
Operating Temperature :
150°C TJ
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Collector Emitter Voltage (VCEO) :
50V
Voltage - Rated DC :
-50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Max Power Dissipation :
750mW
Packaging :
Bulk
Collector Emitter Saturation Voltage :
-200mV
Mounting Type :
Through Hole
Power Dissipation :
750mW
Lead Free :
Lead Free
Frequency :
120MHz
hFE Min :
135
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 100mA 2V
RoHS Status :
RoHS Compliant
Datasheets
KSB1116GBU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSB1116GBU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:KSB1116, Operating Temperature:150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Mounting Type:Through Hole, KSB1116GBU pinout, KSB1116GBU datasheet PDF, KSB1116GBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSB1116GBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSB1116GBU


PNP 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole

KSB1116GBU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 1A volts.

KSB1116GBU Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1A


KSB1116GBU Applications


There are a lot of ON Semiconductor
KSB1116GBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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