KSB1116AYTA
- Mfr.Part #
- KSB1116AYTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 1A TO92-3
- Stock
- 29,357
- In Stock :
- 29,357
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- O-PBCY-T3
- Terminal Position :
- BOTTOM
- Configuration :
- Single
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 120MHz
- Packaging :
- Tape and Box (TB)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- MATTE TIN
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Qualification Status :
- COMMERCIAL
- Transition Frequency :
- 120MHz
- Power - Max :
- 750mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 135 @ 100mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 1A
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector (Ic) (Max) :
- 1A
- Reach Compliance Code :
- Unknown
- Datasheets
- KSB1116AYTA

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSB1116AYTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 135 @ 100mA 2V.When VCE saturation is 300mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 120MHz.The device has a 60V maximal voltage - Collector Emitter Breakdown.
KSB1116AYTA Features
the DC current gain for this device is 135 @ 100mA 2V
the vce saturation(Max) is 300mV @ 50mA, 1A
a transition frequency of 120MHz
KSB1116AYTA Applications
There are a lot of Rochester Electronics, LLC
KSB1116AYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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