KSA643YTA
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- Mfr.Part #
- KSA643YTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 20V 0.5A TO92-3
- Stock
- 20,225
- In Stock ：
- 20,225
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 40
- Collector Emitter Saturation Voltage :
- -300mV
- Voltage - Rated DC :
- -20V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 240mg
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- Current - Collector Cutoff (Max) :
- 200nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material :
- SILICON
- Current Rating :
- -500mA
- Transistor Type :
- PNP
- Max Collector Current :
- 500mA
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Packaging :
- Tape and Box (TB)
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Base Part Number :
- KSA643
- Pbfree Code :
- yes
- Max Power Dissipation :
- 500mW
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Published :
- 2007
- Lead Free :
- Lead Free
- Power Dissipation :
- 500mW
- Transistor Application :
- AMPLIFIER
- Max Breakdown Voltage :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Collector Base Voltage (VCBO) :
- -40V
- Collector Emitter Breakdown Voltage :
- 20V
- Mount :
- Through Hole
- Number of Pins :
- 3
- Datasheets
- KSA643YTA
PNP 150°C TJ 200nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA643YTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 1V.The collector emitter saturation voltage is -300mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
KSA643YTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
KSA643YTA Applications
There are a lot of ON Semiconductor
KSA643YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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