KSA614YTU

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Mfr.Part #
KSA614YTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 55V 3A TO220-3
Stock
24,911
In Stock :
24,911

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Package / Case :
TO-220-3
RoHS Status :
RoHS Compliant
Packaging :
Tube
Transistor Element Material :
SILICON
Published :
2013
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
-5V
Collector Emitter Breakdown Voltage :
55V
Element Configuration :
Single
Collector Emitter Saturation Voltage :
-150mV
Radiation Hardening :
No
Power Dissipation :
25W
Pbfree Code :
yes
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 5V
Max Collector Current :
3A
Operating Temperature :
150°C TJ
Collector Emitter Voltage (VCEO) :
55V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 week ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Current - Collector Cutoff (Max) :
50μA ICBO
ECCN Code :
EAR99
Base Part Number :
KSA614
Number of Pins :
3
Number of Terminations :
3
Factory Lead Time :
6 Weeks
Voltage - Rated DC :
-55V
Current Rating :
-3A
Number of Elements :
1
hFE Min :
40
Max Power Dissipation :
25W
Terminal Finish :
Tin (Sn)
Mounting Type :
Through Hole
Transistor Type :
PNP
JESD-609 Code :
e3
Weight :
1.8g
Collector Base Voltage (VCBO) :
-80V
JEDEC-95 Code :
TO-220AB
Datasheets
KSA614YTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA614YTU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:150°C TJ, Base Part Number:KSA614, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, KSA614YTU pinout, KSA614YTU datasheet PDF, KSA614YTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA614YTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA614YTU


PNP 150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

KSA614YTU Overview


DC current gain in this device equals 120 @ 500mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -150mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.In extreme cases, the collector current can be as low as 3A volts.

KSA614YTU Features


the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -3A


KSA614YTU Applications


There are a lot of ON Semiconductor
KSA614YTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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