KSA642GBU

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Mfr.Part #
KSA642GBU
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP 25V 0.3A TO92-3
Stock
10,796
In Stock :
10,796

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 50mA 1V
Transistor Element Material :
SILICON
Current - Collector (Ic) (Max) :
300mA
Number of Elements :
1
Polarity/Channel Type :
PNP
Transistor Application :
AMPLIFIER
Pbfree Code :
yes
Terminal Finish :
MATTE TIN
Configuration :
Single
Packaging :
Bulk
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Power - Max :
400mW
JESD-30 Code :
O-PBCY-T3
Qualification Status :
COMMERCIAL
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
100nA ICBO
Reach Compliance Code :
Unknown
Peak Reflow Temperature (Cel) :
Not Applicable
Terminal Position :
BOTTOM
Surface Mount :
No
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
600mV @ 30mA, 300mA
Operating Temperature :
150°C TJ
JESD-609 Code :
e3
Voltage - Collector Emitter Breakdown (Max) :
25V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Datasheets
KSA642GBU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA642GBU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, KSA642GBU pinout, KSA642GBU datasheet PDF, KSA642GBU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA642GBU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA642GBU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

KSA642GBU Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 50mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.Device displays Collector Emitter Breakdown (25V maximal voltage).

KSA642GBU Features


the DC current gain for this device is 200 @ 50mA 1V
the vce saturation(Max) is 600mV @ 30mA, 300mA


KSA642GBU Applications


There are a lot of Rochester Electronics, LLC
KSA642GBU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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