KSA614Y

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Mfr.Part #
KSA614Y
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 55V 3A TO220-3
Stock
3,757
In Stock :
3,757

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Through Hole
Terminal Finish :
Tin (Sn)
JEDEC-95 Code :
TO-220AB
Voltage - Rated DC :
-55V
Transistor Element Material :
SILICON
Power Dissipation :
25W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Elements :
1
Operating Temperature :
150°C TJ
Packaging :
Bulk
Collector Emitter Voltage (VCEO) :
55V
Pbfree Code :
yes
Package / Case :
TO-220-3
Collector Emitter Breakdown Voltage :
55V
Published :
2000
Weight :
1.8g
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Base Part Number :
KSA614
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
-80V
Qualification Status :
Not Qualified
Current - Collector Cutoff (Max) :
50μA ICBO
Number of Pins :
3
Max Power Dissipation :
25W
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Number of Terminations :
3
Mount :
Through Hole
Collector Emitter Saturation Voltage :
-150mV
Current Rating :
-3A
RoHS Status :
RoHS Compliant
Max Collector Current :
3A
Polarity/Channel Type :
PNP
hFE Min :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 500mA 5V
Element Configuration :
Single
Factory Lead Time :
6 Weeks
Transistor Application :
AMPLIFIER
JESD-609 Code :
e3
Emitter Base Voltage (VEBO) :
-5V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
KSA614Y
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA614Y from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-220-3, Base Part Number:KSA614, Number of Pins:3, Number of Terminations:3, KSA614Y pinout, KSA614Y datasheet PDF, KSA614Y amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA614Y ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA614Y


PNP 150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Bulk Through Hole

KSA614Y Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 5V.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.A maximum collector current of 3A volts can be achieved.

KSA614Y Features


the DC current gain for this device is 120 @ 500mA 5V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -3A


KSA614Y Applications


There are a lot of ON Semiconductor
KSA614Y applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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