KSA614RTU
- Mfr.Part #
- KSA614RTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 55V 3A TO220-3
- Stock
- 22,993
- In Stock :
- 22,993
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 5V
- Current - Collector (Ic) (Max) :
- 3A
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 55V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3
- Power - Max :
- 25W
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Base Part Number :
- KSA614
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSA614RTU

PNP 150°C TJ 50μA ICBO TO-220-3 Tube Through Hole
KSA614RTU Overview
In this device, the DC current gain is 40 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.There is a 55V maximal voltage in the device due to collector-emitter breakdown.
KSA614RTU Features
the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A
KSA614RTU Applications
There are a lot of ON Semiconductor
KSA614RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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