KSA614RTU

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Mfr.Part #
KSA614RTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 55V 3A TO220-3
Stock
22,993
In Stock :
22,993

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 500mA 5V
Current - Collector (Ic) (Max) :
3A
Transistor Type :
PNP
Voltage - Collector Emitter Breakdown (Max) :
55V
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
Power - Max :
25W
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Packaging :
Tube
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
50μA ICBO
Base Part Number :
KSA614
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
KSA614RTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSA614RTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:KSA614, KSA614RTU pinout, KSA614RTU datasheet PDF, KSA614RTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSA614RTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSA614RTU


PNP 150°C TJ 50μA ICBO TO-220-3 Tube Through Hole

KSA614RTU Overview


In this device, the DC current gain is 40 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 1A.There is a 55V maximal voltage in the device due to collector-emitter breakdown.

KSA614RTU Features


the DC current gain for this device is 40 @ 500mA 5V
the vce saturation(Max) is 500mV @ 100mA, 1A


KSA614RTU Applications


There are a lot of ON Semiconductor
KSA614RTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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