JAN2N5238
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- Mfr.Part #
- JAN2N5238
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 170V 10A TO5
- Stock
- 16,468
- In Stock ：
- 16,468
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5A 5V
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 1A, 10A
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- 200V
- Qualification Status :
- Qualified
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/394
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 10V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 170V
- Configuration :
- Single
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Polarity/Channel Type :
- NPN
- Turn On Time-Max (ton) :
- 550ns
- Pin Count :
- 3
- Packaging :
- Bulk
- Terminal Form :
- Wire
- Current - Collector Cutoff (Max) :
- 10μA
- Turn Off Time-Max (toff) :
- 2000ns
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Max Collector Current :
- 10A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Transistor Type :
- NPN
- Factory Lead Time :
- 22 Weeks
- Pbfree Code :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Datasheets
- JAN2N5238
NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N5238 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 5A 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 10A volts.
JAN2N5238 Features
the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
JAN2N5238 Applications
There are a lot of Microsemi Corporation
JAN2N5238 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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