IXTR90P10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Series :

PolarP™

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

26 Weeks

Base Product Number :

IXTR90

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Product Status :

Active

JESD-609 Code :

e1

Power Dissipation-Max (Abs) :

190 W

Power Dissipation-Max :

190W Tc

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

27m Ω @ 45A, 10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Polarity/Channel Type :

P-Channel

Number of Terminals :

3

Drain Current-Max (Abs) (ID) :

57 A

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Terminal Position :

Single

Package Shape :

RECTANGULAR

Mount :

Through Hole

Power Dissipation (Max) :

190W (Tc)

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Drain-source On Resistance-Max :

0.027Ohm

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Supplier Device Package :

ISOPLUS247™

Operating Temperature :

-55°C~150°C TJ

Package / Case :

ISOPLUS247™

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

57A

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Manufacturer :

IXYS Corporation

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Package :

Tube

Pulsed Drain Current-Max (IDM) :

225A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Reach Compliance Code :

Unknown

Published :

2012

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

2500 mJ

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V