IXTR200N10P

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Mfr.Part #
IXTR200N10P
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 100V 120A ISOPLUS247
Stock
6,178
In Stock :
6,178

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
90 ns
Pulsed Drain Current-Max (IDM) :
400A
Package :
Tube
Power Dissipation-Max :
300W Tc
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
RoHS :
Details
Base Product Number :
IXTR200
Rds On (Max) @ Id, Vgs :
8m Ω @ 60A, 10V
Length :
16.13 mm
Mount :
Through Hole
Channel Mode :
Enhancement
Transistor Type :
1 N-Channel
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.008Ohm
FET Type :
N-Channel
Terminal Form :
THROUGH-HOLE
Pin Count :
3
Width :
5.21 mm
Surface Mount :
No
Number of Channels :
1 Channel
Power Dissipation :
300W
Package / Case :
ISOPLUS247™
ECCN Code :
EAR99
Reach Compliance Code :
Compliant
Product Status :
Active
Series :
HiPerFET™, PolarP2™
Product Category :
MOSFET
Number of Elements :
1
Avalanche Energy Rating (Eas) :
4000 mJ
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Rise Time :
35ns
Transistor Application :
SWITCHING
Mounting Style :
Through Hole
Drain to Source Breakdown Voltage :
100V
Supplier Device Package :
ISOPLUS247™
Published :
2006
Minimum Operating Temperature :
- 55 C
Gate Charge (Qg) (Max) @ Vgs :
235nC @ 10V
Pbfree Code :
yes
Height :
21.34 mm
Turn-Off Delay Time :
150 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~175°C TJ
Case Connection :
Isolated
Qualification Status :
Not Qualified
Number of Terminals :
3
DS Breakdown Voltage-Min :
100 V
Power Dissipation (Max) :
300W (Tc)
Tradename :
Polar
Product Type :
MOSFET
Number of Pins :
3
Transistor Polarity :
N-Channel
Continuous Drain Current (ID) :
120A
Drain to Source Voltage (Vdss) :
100V
Vgs(th) (Max) @ Id :
5V @ 500µA
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package Shape :
RECTANGULAR
Lead Free :
Lead Free
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Type :
Polar HiPerFET Power MOSFET
Maximum Operating Temperature :
+ 175 C
Polarity/Channel Type :
N-Channel
Mounting Type :
Through Hole
FET Feature :
--
Element Configuration :
Single
Factory Lead Time :
28 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
Single
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Subcategory :
MOSFETs
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSIP-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTR200N10P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:ISOPLUS247™, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Type:Polar HiPerFET Power MOSFET, Mounting Type:Through Hole, Number of Terminations:3, IXTR200N10P pinout, IXTR200N10P datasheet PDF, IXTR200N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTR200N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTR200N10P


N-Channel Tube 8m Ω @ 60A, 10V ±20V 7600pF @ 25V 235nC @ 10V 100V ISOPLUS247™

IXTR200N10P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 4000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7600pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 120A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 150 ns.Peak drain current is 400A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100 V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTR200N10P Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 400A.
a 100V drain to source voltage (Vdss)


IXTR200N10P Applications


There are a lot of IXYS
IXTR200N10P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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