IXTR200N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

400A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Vgs(th) (Max) @ Id :

5V @ 500µA

Number of Terminals :

3

Turn-Off Delay Time :

150 ns

Package :

Tube

Reach Compliance Code :

Compliant

Power Dissipation :

300W

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

8m Ω @ 60A, 10V

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

ECCN Code :

EAR99

Mount :

Through Hole

Length :

16.13 mm

FET Feature :

--

Packaging :

Tube

Pin Count :

3

Series :

HiPerFET™, PolarP2™

Number of Terminations :

3

Channel Mode :

Enhancement

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Tradename :

Polar

Type :

Polar HiPerFET Power MOSFET

Fall Time (Typ) :

90 ns

Transistor Application :

SWITCHING

Product Type :

MOSFET

Terminal Form :

THROUGH-HOLE

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

235nC @ 10V

Maximum Operating Temperature :

+ 175 C

Element Configuration :

Single

Vgs (Max) :

±20V

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

ISOPLUS247™

Rise Time :

35ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

100 V

Brand :

IXYS

Drain-source On Resistance-Max :

0.008Ohm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

JESD-30 Code :

R-PSIP-T3

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

Supplier Device Package :

ISOPLUS247™

Polarity/Channel Type :

N-Channel

RoHS :

Details

Base Product Number :

IXTR200

Continuous Drain Current (ID) :

120A

Case Connection :

Isolated

Power Dissipation-Max :

300W Tc

Avalanche Energy Rating (Eas) :

4000 mJ

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

300W (Tc)

Gate to Source Voltage (Vgs) :

20V

Subcategory :

MOSFETs

Package Shape :

RECTANGULAR

Mounting Style :

Through Hole

Factory Lead Time :

28 Weeks

JESD-609 Code :

e1

Published :

2006

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Width :

5.21 mm

Configuration :

Single

Height :

21.34 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Number of Elements :

1

Number of Pins :

3