IXTR200N10P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.008Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Configuration :

Single

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

235nC @ 10V

Published :

2006

Mounting Type :

Through Hole

Package :

Tube

Fall Time (Typ) :

90 ns

Transistor Type :

1 N-Channel

Manufacturer :

IXYS

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

8m Ω @ 60A, 10V

Reach Compliance Code :

Compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 25V

Height :

21.34 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

ISOPLUS247™

Product Category :

MOSFET

Length :

16.13 mm

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

28 Weeks

Continuous Drain Current (ID) :

120A

Transistor Polarity :

N-Channel

Mount :

Through Hole

Subcategory :

MOSFETs

FET Type :

N-Channel

Element Configuration :

Single

Brand :

IXYS

Number of Terminations :

3

Surface Mount :

No

Type :

Polar HiPerFET Power MOSFET

Pin Count :

3

Channel Mode :

Enhancement

Case Connection :

Isolated

Number of Pins :

3

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation :

300W

Drain to Source Breakdown Voltage :

100V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Product Type :

MOSFET

Number of Channels :

1 Channel

ECCN Code :

EAR99

Number of Elements :

1

Packaging :

Tube

Power Dissipation (Max) :

300W (Tc)

Avalanche Energy Rating (Eas) :

4000 mJ

Width :

5.21 mm

Turn-Off Delay Time :

150 ns

Rise Time :

35ns

Power Dissipation-Max :

300W Tc

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Terminal Position :

Single

Number of Terminals :

3

Package Shape :

RECTANGULAR

Terminal Form :

THROUGH-HOLE

Vgs(th) (Max) @ Id :

5V @ 500µA

Maximum Operating Temperature :

+ 175 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Details

Transistor Element Material :

SILICON

Base Product Number :

IXTR200

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™, PolarP2™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100 V

JESD-609 Code :

e1

Mounting Style :

Through Hole

Product Status :

Active

Tradename :

Polar

Supplier Device Package :

ISOPLUS247™

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

400A

JESD-30 Code :

R-PSIP-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)