IXTR62N15P
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- Mfr.Part #
- IXTR62N15P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 36A ISOPLUS247
- Stock
- 28,868
- In Stock ：
- 28,868
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- ISOPLUS247™
- Continuous Drain Current (ID) :
- 36A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2250pF @ 25V
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Series :
- PolarHT™
- FET Feature :
- --
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 31A, 10V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation (Max) :
- 150W (Tc)
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 26 Weeks
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Compliant
- Power Dissipation-Max :
- 150W Tc
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Brand :
- IXYS
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Transistor Polarity :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 150V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.045Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Product Category :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-609 Code :
- e1
- Pulsed Drain Current-Max (IDM) :
- 150A
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Product Type :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Subcategory :
- MOSFETs
- Case Connection :
- Isolated
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 150V
- RoHS :
- Details
- JESD-30 Code :
- R-PSIP-T3
- Package Shape :
- RECTANGULAR
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Package / Case :
- ISOPLUS247™
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Surface Mount :
- No
- Base Product Number :
- IXTR62
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Datasheets
- IXTR62N15P
N-Channel Tube 45m Ω @ 31A, 10V ±20V 2250pF @ 25V 70nC @ 10V 150V ISOPLUS247™
IXTR62N15P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 2250pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 36A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 150A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 150V.To operate this transistor, you need to apply a 150V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTR62N15P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 36A
based on its rated peak drain current 150A.
a 150V drain to source voltage (Vdss)
IXTR62N15P Applications
There are a lot of IXYS
IXTR62N15P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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