IXTR32P60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Tradename :

PolarP

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

18A

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Terminal Position :

Single

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

4V @ 1mA

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

Unknown

RoHS :

Details

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

TIN SILVER COPPER

Supplier Device Package :

ISOPLUS247™

Drain Current-Max (Abs) (ID) :

18 A

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

96A

JESD-609 Code :

e1

JESD-30 Code :

R-PSIP-T3

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

28 Weeks

Number of Channels :

1 Channel

Product Category :

MOSFET

Rise Time :

27 ns

Number of Terminals :

3

Mounting Type :

Through Hole

Width :

5.21 mm

Drain-source On Resistance-Max :

0.385Ohm

Drain to Source Voltage (Vdss) :

600V

Series :

PolarP™

Length :

16.13 mm

Mount :

Through Hole

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

3500 mJ

Base Product Number :

IXTR32

Packaging :

Tube

Published :

2008

FET Feature :

--

Product Type :

MOSFET

Number of Terminations :

3

Brand :

IXYS

Pin Count :

3

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

385m Ω @ 16A, 10V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

310W Tc

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

196nC @ 10V

Package / Case :

ISOPLUS247™

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Channel Mode :

Enhancement

Polarity/Channel Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Height :

21.34 mm

Product Status :

Active

Type :

PolarP Power MOSFET

Power Dissipation-Max (Abs) :

310 W

Package Shape :

RECTANGULAR

Power Dissipation (Max) :

310W (Tc)

DS Breakdown Voltage-Min :

600V

Transistor Polarity :

P-Channel