IXTR30N25

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Mfr.Part #
IXTR30N25
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 250V 25A ISOPLUS247
Stock
30,087
In Stock :
30,087

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.075Ohm
Product Status :
Active
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Power Dissipation :
150W
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
250V
JESD-609 Code :
e1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
-
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Configuration :
Single
Mounting Type :
Through Hole
Pbfree Code :
yes
Base Product Number :
IXTR30
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Number of Terminals :
3
Additional Feature :
AVALANCHE RATED
Height :
21.34 mm
Subcategory :
MOSFETs
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Turn-Off Delay Time :
79 ns
Transistor Type :
1 N-Channel
Pin Count :
3
Reach Compliance Code :
Compliant
Case Connection :
Isolated
Series :
-
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
Rds On (Max) @ Id, Vgs :
75m Ω @ 15A, 10V
Power Dissipation (Max) :
150W (Tc)
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Channels :
1 Channel
Rise Time :
19ns
Number of Terminations :
3
Element Configuration :
Single
JESD-30 Code :
R-PSIP-T3
Package / Case :
ISOPLUS247™
Factory Lead Time :
10 Weeks
Continuous Drain Current (ID) :
25A
Pulsed Drain Current-Max (IDM) :
120A
Power Dissipation-Max :
150W Tc
DS Breakdown Voltage-Min :
250 V
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
136nC @ 10V
Product Category :
MOSFET
Fall Time (Typ) :
17 ns
Packaging :
Tube
Package Shape :
RECTANGULAR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS :
Details
ECCN Code :
EAR99
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
250V
Channel Mode :
Enhancement
Published :
2001
Manufacturer :
IXYS
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Width :
5.21 mm
Supplier Device Package :
ISOPLUS247™
Terminal Form :
THROUGH-HOLE
Number of Pins :
3
Package :
Tube
Avalanche Energy Rating (Eas) :
1000 mJ
Mount :
Through Hole
Product Type :
MOSFET
Maximum Operating Temperature :
+ 150 C
Surface Mount :
No
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
16.13 mm
Datasheets
IXTR30N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTR30N25 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:ISOPLUS247™, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, IXTR30N25 pinout, IXTR30N25 datasheet PDF, IXTR30N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTR30N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTR30N25


N-Channel Tube 75m Ω @ 15A, 10V ±20V 3950pF @ 25V 136nC @ 10V 250V ISOPLUS247™

IXTR30N25 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3950pF @ 25V.This device has a continuous drain current (ID) of [25A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 79 ns.A maximum pulsed drain current of 120A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTR30N25 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 120A.
a 250V drain to source voltage (Vdss)


IXTR30N25 Applications


There are a lot of IXYS
IXTR30N25 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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