IXTR30N25

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Mfr.Part #
IXTR30N25
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 250V 25A ISOPLUS247
Stock
30,087
In Stock :
30,087

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Configuration :
Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code :
R-PSIP-T3
Terminal Position :
Single
Avalanche Energy Rating (Eas) :
1000 mJ
Vgs(th) (Max) @ Id :
4V @ 250µA
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 25V
Transistor Application :
SWITCHING
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Case Connection :
Isolated
Number of Channels :
1 Channel
ECCN Code :
EAR99
Length :
16.13 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Power Dissipation (Max) :
150W (Tc)
Transistor Type :
1 N-Channel
Power Dissipation :
150W
FET Feature :
-
Fall Time (Typ) :
17 ns
Surface Mount :
No
Supplier Device Package :
ISOPLUS247™
RoHS :
Details
Brand :
IXYS
Terminal Form :
THROUGH-HOLE
Package / Case :
ISOPLUS247™
Published :
2001
Reach Compliance Code :
Compliant
Series :
-
Drain-source On Resistance-Max :
0.075Ohm
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Package :
Tube
Maximum Operating Temperature :
+ 150 C
Product Category :
MOSFET
Polarity/Channel Type :
N-Channel
Continuous Drain Current (ID) :
25A
Minimum Operating Temperature :
- 55 C
Gate Charge (Qg) (Max) @ Vgs :
136nC @ 10V
Width :
5.21 mm
Pulsed Drain Current-Max (IDM) :
120A
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
250 V
Product Status :
Active
JESD-609 Code :
e1
Number of Terminations :
3
Rise Time :
19ns
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
79 ns
Drain to Source Voltage (Vdss) :
250V
Pbfree Code :
yes
Element Configuration :
Single
Drain to Source Breakdown Voltage :
250V
Mount :
Through Hole
Pin Count :
3
Gate to Source Voltage (Vgs) :
20V
Base Product Number :
IXTR30
Rds On (Max) @ Id, Vgs :
75m Ω @ 15A, 10V
Subcategory :
MOSFETs
Power Dissipation-Max :
150W Tc
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
10 Weeks
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Height :
21.34 mm
Number of Terminals :
3
Operating Temperature :
-55°C~150°C TJ
Product Type :
MOSFET
Datasheets
IXTR30N25
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTR30N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Channels:1 Channel, Package / Case:ISOPLUS247™, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTR30N25 pinout, IXTR30N25 datasheet PDF, IXTR30N25 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTR30N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTR30N25


N-Channel Tube 75m Ω @ 15A, 10V ±20V 3950pF @ 25V 136nC @ 10V 250V ISOPLUS247™

IXTR30N25 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3950pF @ 25V.This device has a continuous drain current (ID) of [25A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 79 ns.A maximum pulsed drain current of 120A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTR30N25 Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 120A.
a 250V drain to source voltage (Vdss)


IXTR30N25 Applications


There are a lot of IXYS
IXTR30N25 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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