IXTR30N25
- Mfr.Part #
- IXTR30N25
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 25A ISOPLUS247
- Stock
- 30,087
- In Stock :
- 30,087
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSIP-T3
- Package / Case :
- ISOPLUS247™
- Mounting Style :
- Through Hole
- Published :
- 2001
- Power Dissipation-Max :
- 150W Tc
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 250V
- Length :
- 16.13 mm
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.075Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 136nC @ 10V
- Case Connection :
- Isolated
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 25V
- Subcategory :
- MOSFETs
- Manufacturer :
- IXYS
- FET Feature :
- -
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Fall Time (Typ) :
- 17 ns
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Drain to Source Voltage (Vdss) :
- 250V
- Power Dissipation :
- 150W
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 150W (Tc)
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Packaging :
- Tube
- Number of Terminals :
- 3
- Rise Time :
- 19ns
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXTR30
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 250 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Number of Pins :
- 3
- Brand :
- IXYS
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e1
- Continuous Drain Current (ID) :
- 25A
- Width :
- 5.21 mm
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- ISOPLUS247™
- Series :
- -
- Turn-Off Delay Time :
- 79 ns
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 10 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Reach Compliance Code :
- Compliant
- Transistor Polarity :
- N-Channel
- Package Shape :
- RECTANGULAR
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Product Type :
- MOSFET
- Pulsed Drain Current-Max (IDM) :
- 120A
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 15A, 10V
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- Height :
- 21.34 mm
- Product Status :
- Active
- Datasheets
- IXTR30N25
IXTR30N25 Documents

N-Channel Tube 75m Ω @ 15A, 10V ±20V 3950pF @ 25V 136nC @ 10V 250V ISOPLUS247™
IXTR30N25 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3950pF @ 25V.This device has a continuous drain current (ID) of [25A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 79 ns.A maximum pulsed drain current of 120A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 250 V.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTR30N25 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 79 ns
based on its rated peak drain current 120A.
a 250V drain to source voltage (Vdss)
IXTR30N25 Applications
There are a lot of IXYS
IXTR30N25 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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