IXTR30N25

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Polarity/Channel Type :

N-Channel

Base Product Number :

IXTR30

Packaging :

Tube

FET Type :

N-Channel

Case Connection :

Isolated

Pin Count :

3

Product Category :

MOSFET

DS Breakdown Voltage-Min :

250 V

Product Type :

MOSFET

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation (Max) :

150W (Tc)

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

79 ns

Avalanche Energy Rating (Eas) :

1000 mJ

Length :

16.13 mm

Width :

5.21 mm

Height :

21.34 mm

Number of Elements :

1

Supplier Device Package :

ISOPLUS247™

Mounting Style :

Through Hole

Series :

-

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

250V

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation :

150W

RoHS :

Details

Vgs (Max) :

±20V

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Product Status :

Active

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e1

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

10 Weeks

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

25A

Rise Time :

19ns

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

136nC @ 10V

Terminal Position :

Single

Channel Mode :

Enhancement

Configuration :

Single

Subcategory :

MOSFETs

Package / Case :

ISOPLUS247™

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.075Ohm

Power Dissipation-Max :

150W Tc

Package Shape :

RECTANGULAR

Package :

Tube

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

120A

Element Configuration :

Single

Brand :

IXYS

Transistor Application :

SWITCHING

Number of Terminations :

3

FET Feature :

-

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

75m Ω @ 15A, 10V

Manufacturer :

IXYS

Fall Time (Typ) :

17 ns

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Published :

2001

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

250V

Input Capacitance (Ciss) (Max) @ Vds :

3950pF @ 25V