IXTA3N120
- Mfr.Part #
- IXTA3N120
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 3A TO263
- Stock
- 9,165
- In Stock :
- 9,165
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Power Dissipation (Max) :
- 200W (Tc)
- Number of Channels :
- 1 Channel
- Min Operating Temperature :
- -55°C
- Length :
- 10.41 mm
- Continuous Drain Current Id :
- 3A
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Input Capacitance :
- 1.35nF
- Terminal Form :
- Gull wing
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Polarity :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On Max :
- 4.5 Ω
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150°C
- Product Type :
- MOSFET
- Width :
- 9.65 mm
- Channel Mode :
- Enhancement
- Base Product Number :
- IXTA3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 200W Tc
- Manufacturer :
- IXYS
- Transistor Type :
- 1 N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Supplier Device Package :
- TO-263 (IXTA)
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 1200V
- Brand :
- IXYS
- JEDEC-95 Code :
- TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 12 A
- Rise Time :
- 15ns
- DS Breakdown Voltage-Min :
- 1200 V
- Continuous Drain Current (ID) :
- 3A
- Reach Compliance Code :
- not_compliant
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Resistance :
- 4.5Ohm
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Channel Type :
- N Channel
- Number of Terminals :
- 2
- Rds On (Max) @ Id, Vgs :
- 4.5Ohm @ 1.5A, 10V
- Drain-source On Resistance-Max :
- 4.5 Ω
- Additional Feature :
- AVALANCHE RATED
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- SMD/SMT
- Resistance :
- 4.5Ohm
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Product Status :
- Active
- Minimum Operating Temperature :
- - 55 C
- Product Category :
- MOSFET
- Voltage - Rated DC :
- 1.2kV
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Height :
- 4.83 mm
- RoHS :
- Details
- Factory Lead Time :
- 28 Weeks
- Qualification :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 1.1kV
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Power Dissipation :
- 150W
- Maximum Operating Temperature :
- + 150 C
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Subcategory :
- MOSFETs
- Configuration :
- Single
- Packaging :
- Tube
- Series :
- --
- Number of Elements :
- 1
- Package :
- Tube
- Turn-Off Delay Time :
- 32 ns
- Published :
- 2004
- Fall Time (Typ) :
- 18 ns
- Datasheets
- IXTA3N120

N-Channel Tube 4.5Ohm @ 1.5A, 10V ±20V 1350pF @ 25V 42nC @ 10V 1200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA3N120 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.1kV. And this device has 1.1kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 32 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 12 A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 4.5Ohm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 1200 V in order to maintain normal operation.Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTA3N120 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.1kV voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 12 A.
single MOSFETs transistor is 4.5Ohm
a 1200V drain to source voltage (Vdss)
IXTA3N120 Applications
There are a lot of IXYS
IXTA3N120 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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