IXTA1R4N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

FET Feature :

--

Gate to Source Voltage (Vgs) :

20V

Rise Time :

27ns

Rds On (Max) @ Id, Vgs :

13 Ω @ 500mA, 10V

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

1200 V

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

JEDEC-95 Code :

TO-263AB

Factory Lead Time :

28 Weeks

Pulsed Drain Current-Max (IDM) :

3A

Base Product Number :

IXTA1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Number of Terminals :

2

Series :

Polar™

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

1.2kV

RoHS :

Details

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max (Abs) :

86 W

Avalanche Energy Rating (Eas) :

150 mJ

Drain-source On Resistance-Max :

13 Ω

Published :

2012

Resistance :

13Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Style :

SMD/SMT

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Width :

10.41 mm

Transistor Polarity :

N-Channel

Product Category :

MOSFET

Element Configuration :

Single

Surface Mount :

yes

Product Status :

Active

Type :

Polar Power MOSFET

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Height :

4.83 mm

Gate Charge (Qg) (Max) @ Vgs :

24.8nC @ 10V

Packaging :

Tube

Length :

9.65 mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

86W

Terminal Position :

Single

Manufacturer :

IXYS

JESD-609 Code :

e3

Brand :

IXYS

Power Dissipation-Max :

86W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

Single

Drain to Source Voltage (Vdss) :

1200V

Supplier Device Package :

TO-263 (IXTA)

Minimum Operating Temperature :

- 55 C

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Vgs (Max) :

±20V

Package :

Tube

Turn-Off Delay Time :

78 ns

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Tradename :

Polar

Product Type :

MOSFET

Channel Mode :

Enhancement

Power Dissipation (Max) :

86W (Tc)

Drain Current-Max (Abs) (ID) :

1.4 A

Number of Channels :

1 Channel

Continuous Drain Current (ID) :

1.4A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

666pF @ 25V

Transistor Type :

1 N-Channel

Fall Time (Typ) :

29 ns