IXST40N60B
- Mfr.Part #
- IXST40N60B
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- IGBT 600V 75A 280W TO268
- Stock
- 18,113
- In Stock :
- 18,113
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 480V, 40A, 2.7 Ω, 15V
- Base Part Number :
- IXS*40N60
- Turn On Time :
- 55 ns
- Additional Feature :
- High Speed
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 1.8mJ (off)
- Series :
- --
- Gate-Emitter Voltage-Max :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Number of Terminals :
- 2
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 600V
- Number of Terminations :
- 2
- IGBT Type :
- PT
- Base Product Number :
- IXST40
- Package :
- Tube
- Power - Max :
- 280W
- Max Collector Current :
- 75A
- Collector Current-Max (IC) :
- 75 A
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 40A
- Supplier Device Package :
- TO-268
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2.2V
- Weight :
- 4.500005g
- Fall Time-Max (tf) :
- 180ns
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Input Type :
- Standard
- Current - Collector (Ic) (Max) :
- 75A
- JEDEC-95 Code :
- TO-268AA
- JESD-30 Code :
- R-PSSO-G2
- Product Status :
- Obsolete
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS Corporation
- Collector Emitter Breakdown Voltage :
- 600V
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Mount :
- Surface Mount
- Gate Charge :
- 190nC
- Number of Elements :
- 1
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Collector-Emitter Voltage-Max :
- 600 V
- Td (on/off) @ 25°C :
- 50ns/110ns
- Published :
- 2000
- Max Power Dissipation :
- 280W
- Power Dissipation-Max (Abs) :
- 280 W
- Turn Off Time-Nom (toff) :
- 190 ns
- Current - Collector Pulsed (Icm) :
- 150A
- Transistor Element Material :
- SILICON
- Transistor Application :
- POWER CONTROL
- Gate-Emitter Thr Voltage-Max :
- 7V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Package Shape :
- RECTANGULAR
- Datasheets
- IXST40N60B
IXST40N60B Documents

IXST40N60B datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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