IXGX32N170H1

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Reach Compliance Code :

Compliant

Reverse Recovery Time (trr) :

150ns

Power Dissipation :

350W

JESD-30 Code :

R-PSIP-T3

Td (on/off) @ 25°C :

45ns/270ns

Turn-Off Delay Time :

270 ns

Vce(on) (Max) @ Vge, Ic :

3.3V @ 15V, 32A

Series :

--

Manufacturer :

IXYS Corporation

Number of Pins :

3

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Collector Current-Max (IC) :

75 A

Surface Mount :

No

Number of Elements :

1

Input Type :

Standard

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reverse Recovery Time :

150 ns

Turn On Time :

90 ns

JESD-609 Code :

e1

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Collector Current :

75A

Collector Emitter Voltage (VCEO) :

1.7kV

Mount :

Through Hole

Collector-Emitter Voltage-Max :

1700 V

Test Condition :

1360V, 32A, 2.7 Ω, 15V

Qualification Status :

Not Qualified

Published :

2003

Switching Energy :

15mJ (off)

Package :

Bulk

Product Status :

Obsolete

Supplier Device Package :

PLUS247™-3

Base Product Number :

IXGX32

Collector Emitter Saturation Voltage :

2.5V

Current - Collector Pulsed (Icm) :

200A

Current - Collector (Ic) (Max) :

75A

Base Part Number :

IXG*32N170

Factory Lead Time :

8 Weeks

Power - Max :

350W

Turn On Delay Time :

45 ns

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Pin Count :

3

Terminal Position :

Single

Gate Charge :

155nC

Turn Off Time-Nom (toff) :

920 ns

Package / Case :

TO-247-3

Collector Emitter Breakdown Voltage :

1.7kV

Max Power Dissipation :

350W

IGBT Type :

NPT

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Bulk

Number of Terminations :

3

Pbfree Code :

yes

Voltage - Collector Emitter Breakdown (Max) :

1700V

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Operating Temperature :

-55°C~150°C TJ