IXGT28N60BD1
- Mfr.Part #
- IXGT28N60BD1
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- IGBT 600V 40A 150W TO268
- Stock
- 1,156
- In Stock :
- 1,156
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Pin Count :
- 4
- Terminal Position :
- Single
- Published :
- 2003
- Qualification Status :
- Not Qualified
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 28A
- JESD-30 Code :
- R-PSSO-G2
- Package Shape :
- RECTANGULAR
- Gate Charge :
- 68nC
- Element Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 150 W
- Series :
- --
- Collector-Emitter Voltage-Max :
- 600 V
- Case Connection :
- COLLECTOR
- Base Product Number :
- IXGT28
- Turn Off Time-Nom (toff) :
- 800 ns
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- IGBT Type :
- --
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-268AA
- Power - Max :
- 150W
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 40A
- Switching Energy :
- 2mJ (off)
- Package :
- Tube
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Collector Current-Max (IC) :
- 40 A
- Turn On Time :
- 40 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Type :
- Standard
- Number of Terminals :
- 2
- Base Part Number :
- IXG*28N60
- Mount :
- Surface Mount
- Gate-Emitter Voltage-Max :
- 20V
- Fall Time-Max (tf) :
- 400ns
- Max Power Dissipation :
- 150W
- Test Condition :
- 480V, 28A, 10 Ω, 15V
- Reverse Recovery Time (trr) :
- 25ns
- Current - Collector Pulsed (Icm) :
- 80A
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- TO-268
- Td (on/off) @ 25°C :
- 15ns/175ns
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Collector Emitter Voltage (VCEO) :
- 600V
- Current - Collector (Ic) (Max) :
- 40A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Weight :
- 4.500005g
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Transistor Application :
- POWER CONTROL
- Terminal Form :
- Gull wing
- Reverse Recovery Time :
- 25 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Surface Mount :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Obsolete
- Datasheets
- IXGT28N60BD1

IXGT28N60BD1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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