IXGF25N300
- Mfr.Part #
- IXGF25N300
- Manufacturer
- Littelfuse
- Package / Case
- i4-Pac™-5 (3 Leads)
- Datasheet
- Download
- Description
- IGBT 3000V 27A 114W I4-PAK
- Stock
- 5,951
- In Stock :
- 5,951
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Voltage (VCEO) :
- 5.5V
- Mount :
- Through Hole
- Product Type :
- IGBT Transistors
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Switching Energy :
- --
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Manufacturer :
- IXYS
- Product Category :
- IGBT Transistors
- RoHS :
- Details
- Packaging :
- Tube
- JESD-30 Code :
- R-PSIP-T3
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 27A
- Voltage - Collector Emitter Breakdown (Max) :
- 3000V
- Pbfree Code :
- yes
- Power Dissipation-Max (Abs) :
- 114 W
- Max Power Dissipation :
- 114W
- Brand :
- IXYS
- Element Configuration :
- Single
- Product Status :
- Active
- Collector Current-Max (IC) :
- 27 A
- Max Collector Current :
- 27A
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 5.5V @ 15V, 75A
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 26 Weeks
- Turn Off Time-Nom (toff) :
- 720 ns
- Reach Compliance Code :
- Compliant
- Mounting Type :
- Through Hole
- Transistor Application :
- POWER CONTROL
- Number of Terminations :
- 3
- Pin Count :
- 3
- Test Condition :
- --
- Technology :
- Si
- Package :
- Tube
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- UL RECOGNIZED
- Base Product Number :
- IXGF25
- Td (on/off) @ 25°C :
- --
- Package Shape :
- RECTANGULAR
- Package / Case :
- i4-Pac™-5 (3 Leads)
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Gate-Emitter Thr Voltage-Max :
- 5V
- Current - Collector Pulsed (Icm) :
- 140A
- Supplier Device Package :
- ISOPLUS i4-PAC™
- Series :
- --
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- Single
- Number of Terminals :
- 3
- Gate Charge :
- 75nC
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Power - Max :
- 114W
- IGBT Type :
- --
- Collector-Emitter Voltage-Max :
- 3000 V
- Turn On Time :
- 310 ns
- Input Type :
- Standard
- Collector Emitter Breakdown Voltage :
- 3kV
- Datasheets
- IXGF25N300
IXGF25N300 Documents

IXGF25N300 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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