IXFN23N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Height :

9.6 mm

RoHS Status :

ROHS3 Compliant

Product Category :

Discrete Semiconductor Modules

Terminal Position :

UPPER

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Brand :

IXYS

Power Dissipation (Max) :

600W (Tc)

Package :

Tube

Max Power Dissipation :

595 W

Transistor Application :

SWITCHING

Turn-Off Delay Time :

75 ns

RoHS :

Details

Drain Current-Max (Abs) (ID) :

23 A

Product :

Power MOSFET Modules

Mount :

Chassis Mount

Supplier Device Package :

SOT-227B

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current (ID) :

23A

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Nickel (Ni)

Pulsed Drain Current-Max (IDM) :

92A

Terminal Form :

UNSPECIFIED

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Type :

Discrete Semiconductor Modules

Mounting Type :

Chassis Mount

Qualification Status :

Not Qualified

Min Operating Temperature :

-55 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Manufacturer :

IXYS

Additional Feature :

AVALANCHE RATED

Number of Terminals :

4

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

390mOhm

Rds On (Max) @ Id, Vgs :

--

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Tradename :

HyperFET

Package Shape :

RECTANGULAR

Product Status :

Active

Package / Case :

SOT-227-4, miniBLOC

Max Operating Temperature :

150 °C

Number of Channels :

1 Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Base Product Number :

IXFN23

Polarity/Channel Type :

N-Channel

Number of Terminations :

4

Number of Elements :

1

Power Dissipation-Max (Abs) :

600 W

Drain to Source Breakdown Voltage :

1kV

Avalanche Energy Rating (Eas) :

3000 mJ

Drain to Source Voltage (Vdss) :

1000V

Vgs(th) (Max) @ Id :

5V @ 8mA

Published :

2005

Width :

25.07 mm

Drain-source On Resistance-Max :

0.43 Ω

Transistor Polarity :

N-Channel

Length :

38.2 mm

FET Type :

N-Channel

Fall Time (Typ) :

21 ns

Pin Count :

4

Power Dissipation :

568W

JESD-30 Code :

R-PUFM-X4

DS Breakdown Voltage-Min :

1000 V

Rise Time :

35ns

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

30 Weeks

Power Dissipation-Max :

600W Tc

Series :

--

Mounting Style :

Chassis Mount

Case Connection :

Isolated

Vgs (Max) :

±20V