IXFM67N10
- Mfr.Part #
- IXFM67N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 67A TO204AE
- Stock
- 9,848
- In Stock :
- 9,848
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- No
- Published :
- 2012
- Base Product Number :
- IXFM67
- Manufacturer :
- IXYS Corporation
- Reach Compliance Code :
- Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Obsolete
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 100V
- JESD-30 Code :
- O-MBFM-P2
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation-Max (Abs) :
- 300 W
- Package :
- Tube
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Terminal Position :
- BOTTOM
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-204AE
- Number of Terminals :
- 2
- Power Dissipation (Max) :
- 300W (Tc)
- Power Dissipation Ambient-Max :
- 300 W
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Terminal Form :
- PIN/PEG
- Supplier Device Package :
- TO-204AE
- Transistor Element Material :
- SILICON
- Pin Count :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- Round
- Package / Case :
- TO-204AE
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 67A
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 33.5A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- HiPerFET™
- Drain-source On Resistance-Max :
- 0.025Ohm
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 268A
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 100V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFM67N10
IXFM67N10 Documents
N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-204AE
IXFM67N10 Overview
A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 67A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 268A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFM67N10 Features
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)
IXFM67N10 Applications
There are a lot of IXYS
IXFM67N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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